Simulation of Nanoelectronic Semiconductor Devices

• Integration of FinFET-structures
• Strained semiconductor devices
• Reconfigurable field effect transistors (RFET)
• RF characterization of highly integrated MOSFETs
• Low frequency noise effects of FDSOI transistors
• Simulation of FDSOI-structures

Prof. Dr.-Ing. habil. Roland Stenzel

Former Rector / Chairman of HTWD Friends Association

• Z 412
• +49 351 462 2548
• Email

Prof. Dr.-Ing. Tim Baldauf

• Z 448
• +49 351 462 2035
• Email