Simulation of Nanoelectronic Semiconductor Devices
- Integration of FinFET-structures
- Strained semiconductor devices
- Random doping fluctuations
- Reconfigurable field effect transistors (RFET)
- RF characterization of highly integrated MOSFETs
- Low frequency noise effects of FDSOI transistors
- Simulation of FDSOI-structures
Prof. Dr.-Ing. Tim Baldauf
- Room: Z 448
- Tel: +49 351 462 2035
