Simulation of Nanoelectronic Semiconductor Devices
- Integration of FinFET-structures
- Strained semiconductor devices
- Reconfigurable field effect transistors (RFET)
- RF characterization of highly integrated MOSFETs
- Low frequency noise effects of FDSOI transistors
- Simulation of FDSOI-structures
Prof. Dr.-Ing. habil. Roland Stenzel
Former Rector / Chairman of HTWD Friends Association
- Z 412
- +49 351 462 2548
![Prof. Dr.-Ing. habil. Roland Stenzel](/uploads/tx_xmhtwpeople/Frontend-Nutzer-Bilder/_processed_/f/8/csm_stenzel_5ea9bb033e47e_765578741d.jpg)
Prof. Dr.-Ing. Tim Baldauf
- Z 448
- +49 351 462 2035
![Prof. Dr.-Ing. Tim Baldauf](/uploads/tx_xmhtwpeople/Frontend-Nutzer-Bilder/_processed_/9/e/csm_baldauf_5d9f0ad47e4e7_6536f2375c.jpg)